Cart is empty 
Description
UFS N-Channel IGBT Transistor
The HGT1S7N60C3D is a MOS gated voltage switching device. It has the benefits of a MOSFET with high input impedance along with the low on-state conduction loss of a bipolar transistor.
Maximum Ratings
- Collector-Emitter Voltage: 600V
- Collector Current Continuous
- At TC = 25 C: 14A
- At TC = 110 C: 7A
- Average Diode Forward Current at 110 C: 8A
- Collector Current Pulsed: 56A
- Gate-Emitter Voltage Continuous: 20V
- Gate-Emitter Voltage Pulsed: 30V
- Switching Safe Operating Area at TJ = 150 C: 40A @ 480V
- Power Dissipation Total at TC = 25 C: 60W
- Derating TC > 25 C: 0.487W/ C
- Operating and Storage Junction Temperature Range: -40 to 150 C
- Short Circuit Withstand Time @ VGE = 15V: 1us
- Short Circuit Withstand Time @ VGE = 10V: 8us
Applications:
- AC and DC Motor Controls
- Power Supplies and Drivers for Solenoids
- Relays and Contactors
Manufactured by: Harris
- Part Number: HGT1S7N60C3D
Features:
- 14A600V at TC = 25 C
- 600V Switching SOA Capability
- Typical Fall Time: 140ns @ TJ = 150 C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
