N-CHANNEL IGBT TRANSISTOR 14A 600V

ر.س 15.87

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Description

UFS N-Channel IGBT Transistor

The HGT1S7N60C3D is a MOS gated voltage switching device. It has the benefits of a MOSFET with high input impedance along with the low on-state conduction loss of a bipolar transistor.

Maximum Ratings 

  • Collector-Emitter Voltage: 600V
  • Collector Current Continuous
  • At TC = 25 C: 14A
  • At TC = 110 C: 7A
  • Average Diode Forward Current at 110 C: 8A
  • Collector Current Pulsed: 56A
  • Gate-Emitter Voltage Continuous:  20V
  • Gate-Emitter Voltage Pulsed:  30V
  • Switching Safe Operating Area at TJ = 150 C: 40A @ 480V
  • Power Dissipation Total at TC = 25 C: 60W
  • Derating TC > 25 C: 0.487W/ C
  • Operating and Storage Junction Temperature Range: -40  to 150 C
  • Short Circuit Withstand Time @ VGE = 15V: 1us
  • Short Circuit Withstand Time @ VGE = 10V: 8us

Applications: 

  • AC and DC Motor Controls
  • Power Supplies and Drivers for Solenoids
  • Relays and Contactors

Manufactured by: Harris 

  • Part Number: HGT1S7N60C3D

Features:

  • 14A600V at TC = 25 C
  • 600V Switching SOA Capability
  • Typical Fall Time: 140ns @ TJ = 150 C
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-Parallel Diode